Editorial

Platinum Silicide-Silicon Schottky Diode Characteristics

N. Musaeva S., A. Kerimov E., F. Kazımov N., I. Huseynova S.

2 Vol, 2 No (2018) Pages 41-43 Open Access

Abstract

Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.

The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.

Keywords

Platinum; Silicide-Silicon; Schottky Diode; Characteristics

References

Sh.Myurarka. Silicides for VLSI.Moscow «МИР»1986, Translated from English by Candidate of Technical Sciences V.V. Baranova, under the title of Prof., Dr.Sc.Yu.D.Chistyakov. (in Russian)

Kerimov E.A, Guluzade B.A, Hasanova R.R. Pd - Si Structures Acquisition Technology and Photoelectric Properties.Physics.2009, p.15, No. 4, pp. 35-37. (in Russian)

E.A. Kerimov .Photosensitive element based on the İrSi - Si contact.News of ANAS, Physics and Astronomy 2011, №5, Volume XXXI, p.158-161. (in Russian)

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Copyright © 2018 S. N. Musaeva, E. A. Kerimov, N. F. Kazımov, S. I. Huseynova
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