远离沟道的P型埋层对AlGaN/GaN MISFET器件的击穿增强

洁 许(上海电力大学，中国)
徐国 章(上海电力大学，中国)

摘要

利用TCAD软件搭建具有远离沟道的p-GaN埋层的横向AlGaN/GaN MISFET模型，研究埋层的不同参数对器件击穿特性的影响。论文提出的器件显示了1941V的高击穿电压。

关键词

AlGaN/GaN；p-GaN；击穿点转移；电场分布

参考

Choi W, Seok O, Ryu H, et al. High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2[J].Ieee Electron Device Letters,2014,35(2):175-177.

Tang Z K, Jiang Q M, Lu Y Y, et al. 600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse[J].Ieee Electron Device Letters,2013,34(11):1373-1375.

Wu T L, Franco J, Marcon D, et al. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs[J].Ieee Transactions on Electron Devices,2016,63(5):1853-1860.

Zhou Q, Yang Y, Hu K, et al. Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode[J].Ieee Transactions on Industrial Electronics,2017,64(11):8971-8979.

DOI: http://dx.doi.org/10.12345/gcjsygl.v6i3.10240