两步法CVD生长厚度可调的SnS2/MoS2垂直堆垛

康 田(湖北大学物理与电子学院铁压电材料与器件湖北省重点实验室，中国)
佳旻 陈(湖北大学物理与电子学院铁压电材料与器件湖北省重点实验室，中国)
涵哲 龚(湖北大学物理与电子学院铁压电材料与器件湖北省重点实验室，中国)
伟 张(湖北大学物理与电子学院铁压电材料与器件湖北省重点实验室，中国)
喜娜 王(湖北大学物理与电子学院铁压电材料与器件湖北省重点实验室，中国)

摘要

SnS2/MoS2异质结构由于具有大的能带偏移和II型能带排列而受到关注。本文通过调整载气和反应源温度，在单层MoS2上制备了厚度可控的SnS2片。研究发现，在较高的源温度下，载气中引入H2，导致在SiO2/Si上生长2 nm厚的SnS2片。而在纯Ar载气条件下，SnS2纳米片为一百多纳米。以单层MoS2片为衬底，在MoS2上外延生长SnS2，可以获得SnS2/MoS2的垂直双层叠层。本研究为高质量垂直异质结构的合成提供了一种有效的方法

关键词

二硫化锡；异质结；化学气相沉积；拉曼

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DOI: http://dx.doi.org/10.26549/gcjsygl.v5i6.6576