Platinum Silicide-Silicon Schottky Diode Characteristics

N. Musaeva S.(Azerbaijan Technical University, Baku)
A. Kerimov E.(War College of Armed Forces, Azerbaijan Republic Ministry of Defense, Baku)
F. Kazımov N.(Institute of Ecology, National Aerospace Agency, Baku)
I. Huseynova S.(Institute of Ecology, National Aerospace Agency, Baku)

Abstract

Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.

The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.

Keywords

Platinum; Silicide-Silicon; Schottky Diode; Characteristics

References

Sh.Myurarka. Silicides for VLSI.Moscow «МИР»1986, Translated from English by Candidate of Technical Sciences V.V. Baranova, under the title of Prof., Dr.Sc.Yu.D.Chistyakov. (in Russian)

Kerimov E.A, Guluzade B.A, Hasanova R.R. Pd - Si Structures Acquisition Technology and Photoelectric Properties.Physics.2009, p.15, No. 4, pp. 35-37. (in Russian)

E.A. Kerimov .Photosensitive element based on the İrSi - Si contact.News of ANAS, Physics and Astronomy 2011, №5, Volume XXXI, p.158-161. (in Russian)

DOI: http://dx.doi.org/10.26549/met.v2i2.850